Aging of InGaN/AlGaN/GaN Light-Emitting Diodes-Reference-Cited by-同舟云学术

Aging of InGaN/AlGaN/GaN Light-Emitting Diodes

Published:1997 Issue: Volume:482 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Yunovich A. E.,Kovalev A. N.,Kudryashov V. E.,Imanyakin F.,Turkin A. N.

Abstract

AbstractChanges in luminescent spectra, current-voltage, and capacitance-voltage characteristics were studied versus time of working at forward currents for light-emitting diodes based on InGaN/AlGaN/GaN heterostructures. The samples of blue and green LEDs with a single quantum well InGaN active layers were studied during 102-2.103 hours at currents 30–80 mA. An increase in efficiency at the first stage and a decrease one at the second stage were detected. The main changes were detected at low currents in blue diodes for tunnel components of current and radiation. Activation of acceptors Mg because of residual H atoms are going out of complexes Mg-H and creation of donor type defects are proposed as models for two stages. A model of injection stimulated (non-thermal) underthreshold creation of defects can explain the results.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference16 articles.

1. 15. Kovalev A.N. , Kudryashov V.E. , Manyachin F.I. , Turkin A.N. , Yunovich A.E. . Proc. of the 2nd Int. Conf. Nitr. Semicond., Oct. 1997, Tokushima, Jap., P1–6, pp.46–47.

2. 14. Yunovich A.E. , Kudryashov V.E. , Turkin A.N. , Zolina K.G. , Kovalev A.N. , Manyachin F.I. . Meeting of Electrochem. Soc., Paris, Sept. 1997, Abstr. No. 1837, p.2110; to be published.

3. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes

4. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

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