Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy-Reference-Cited by-同舟云学术

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Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

Published:2008-11-17 Issue:20 Volume:93 Page:202108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Veal T. D.,King P. D. C.,Hatfield S. A.,Bailey L. R.,McConville C. F.,Martel B.,Moreno J. C.,Frayssinet E.,Semond F.,Zúñiga-Pérez J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3032911

Reference31 articles.

1. A comprehensive review of ZnO materials and devices

2. ZnO as a material mostly adapted for the realization of room-temperature polariton lasers

3. Bose–Einstein condensation of exciton polaritons

4. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

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