Spatially Indirect Excitons in GaN–ZnO Heterostructures with Long and Electrically Controllable Lifetime-Reference-Cited by-同舟云学术

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Spatially Indirect Excitons in GaN–ZnO Heterostructures with Long and Electrically Controllable Lifetime

Published:2024-03-21 Issue:4 Volume:2 Page:549-555
ISSN:2771-9855
Container-title:ACS Applied Optical Materials
language:en
Short-container-title:ACS Appl. Opt. Mater.

Author:

Kaur Amandeep¹^ORCID,Arora Simran¹,Dhar Subhabrata¹

Affiliation:

1. Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, India

Funder

Council of Scientific and Industrial Research, India

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaom.3c00466

Reference35 articles.

1. Bose–Einstein condensation and indirect excitons: a review

2. Spontaneous coherence in a cold exciton gas

3. Coherence Length of Cold Exciton Gases in Coupled Quantum Wells

4. Strongly correlated excitonic insulator in atomic double layers

5. Dipolar excitonic insulator in a moiré lattice

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1. Excitons and excitonic materials;MRS Bulletin;2024-09

2. (0001)n-ZnO/(0001)p-GaN Heterostructure Based Self-Driven Fast UV Photodetectors and the Role of the Polarization Induced Interfacial 2D Electron Gas Channel;ACS Applied Electronic Materials;2024-08-27

3. Epitaxial growth of excitonic single crystals and heterostructures: Oxides and nitrides;MRS Bulletin;2024-08-06

4. Ultraviolet electroluminescence with electrically tunable colour from epitaxial n-(0001)ZnO/p-(0001)GaN light-emitting diodes;Semiconductor Science and Technology;2024-05-30

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