Inert‐gas‐bubble formation in the implanted metal/Si system
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.326475
Reference8 articles.
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5. Transmission electron microscopy of cross sections of large scale integrated circuits
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1. Gas-phase ionisation of sputtered rare gas atoms;International Journal of Mass Spectrometry;2008-01
2. Oxidation and formation mechanisms in disilicides: VSi2and CrSi2, inert marker experiments and interpretation;Journal of Applied Physics;1990-12-15
3. Oxidation of titanium, manganese, iron, and niobium silicides: Marker experiments;Journal of Applied Physics;1990-11-15
4. The reaction of ion-beam mixed titanium layers on silicon induced by electron beam heating;Semiconductor Science and Technology;1989-11-01
5. Formation of silicon carbide layers by the ion beam technique and their electrical properties;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-03
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