A unified model for unipolar resistive random access memory-Reference-Cited by-同舟云学术

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A unified model for unipolar resistive random access memory

Published:2012-02-20 Issue:8 Volume:100 Page:083509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Kwangseok,Jang Jung-Shik,Kwon Yongwoo,Lee Keun-Ho,Park Young-Kwan,Young Choi Woo

Funder

Ministry of Education, Science, and Technology (South Korea)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3688944

Reference14 articles.

1. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

2. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

3. Effect of Scaling $\hbox{WO}_{x}$-Based RRAMs on Their Resistive Switching Characteristics

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1. Spatiotemporal dynamics of voltage-induced resistance transition in the double-exchange model;Physical Review B;2022-12-28

2. Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation;Scientific Reports;2021-01-28

3. Extraction of interface trap density by analyzing organohalide perovskite and metal contacts using device simulation;AIP Advances;2019-12-01

4. Memristive properties of In2O3/LaNiO3 heterostructures grown by pulsed laser deposition;Journal of Materials Science: Materials in Electronics;2015-10-28

5. Resistive switching phenomena: A review of statistical physics approaches;Applied Physics Reviews;2015-08-31

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