Critical oxygen concentration in hydrogenated amorphous silicon solar cells dependent on the contamination source
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3357424
Reference13 articles.
1. Proceedings of the 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion;Rech B.,1998
2. Influence of Oxygen and Nitrogen in the Intrinsic Layer of a-Si:H Solar Cells
3. Doping effect of oxygen or nitrogen impurity in hydrogenated amorphous silicon films
4. Influence of N, O and C impurities in a-Si:H
5. Boron‐compensation effect on hydrogenated amorphous silicon with oxygen and nitrogen impurities
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3. Electronic structure of O-doped SiGe calculated by DFT + U method;Chinese Physics B;2016-11-29
4. Effect of oxygen doping in microcrystalline SiGe p-i-n solar cells;Journal of Applied Physics;2014-08-07
5. Residual impurities in a process chamber on the characteristics of a-Si:H solar cells;Solar Energy Materials and Solar Cells;2013-10
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