Doping effect of oxygen or nitrogen impurity in hydrogenated amorphous silicon films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106102
Reference10 articles.
1. Nature of Localized States in Hydrogenated Si–Based Amorphous Semiconductor Films Elucidated from LESR and CPM
2. Effect of Reduction in Impurity Content for a-Si:H Films
3. Effect of Charged Defects on Properties of Amorphous Si-Based Alloys
4. Impurity incorporation and doping efficiency ina-Si:H
5. Detailed investigation of doping in hydrogenated amorphous silicon and germanium
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