Residual impurities in a process chamber on the characteristics of a-Si:H solar cells-Reference-Cited by-同舟云学术

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Residual impurities in a process chamber on the characteristics of a-Si:H solar cells

Published:2013-10 Issue: Volume:117 Page:617-623
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Kuo Tai-Chao,Jiang Yeu-Long

Funder

National Science Council

Research Center for Energy Technology and Strategy, National Cheng Kung University

AsiaTree Technology Co. Ltd

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Influence of N, O and C impurities in a-Si:H;Shimizu;Journal of Non-Crystalline Solids,1991

2. Doping effect of oxygen or nitrogen impurity in hydrogenated amorphous silicon films;Morimoto;Applied Physics Letters,1991

3. Effects of the i-layer properties and impurity on the performance of a-Si solar cell;Hishikawa;Solar Energy Materials and Solar Cells,1994

4. Influence of oxygen impurity in the intrinsic layer of amorphous silicon solar cells;Isomura;Applied Physics Letters,1994

5. Influence of oxygen and nitrogen in the intrinsic layer of a-Si:H solar cells;Kinoshita;Japanese Journal of Applied Physics,1996

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pulsed-plasma spatial modulation of i-layer structures and oxygen impurity profiles of hydrogenated amorphous silicon solar cells;Journal of Non-Crystalline Solids;2022-09

2. Pulsed Plasma Modulated i-Layer Structure and Oxygen Impurities Profiles on the Electrical Properties and Quantum Efficiencies of a-Si:H p-i-n Solar Cells;SSRN Electronic Journal;2021

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