Reduction in reset current of unipolar NiO-based resistive switching through nickel interfacial layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3528211
Reference23 articles.
1. Reproducible resistance switching in polycrystalline NiO films
2. Identification of a determining parameter for resistive switching of TiO2 thin films
3. Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance
4. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
5. Model of metallic filament formation and rupture in NiO for unipolar switching
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