Oxygen Affinity of Metal Electrodes as Control Parameter in Tuning the Performance of Cu x O‐Based Resistive Random Access Memory Devices-Reference-Cited by-同舟云学术

Oxygen Affinity of Metal Electrodes as Control Parameter in Tuning the Performance of Cu x O‐Based Resistive Random Access Memory Devices

Published:2019-10-18 Issue:22 Volume:216 Page:1900392
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Sangani Laxmi Dhanaraju Varma¹²,Krishna Mamidipudi Ghanashyam¹^ORCID

Affiliation:

1. Centre for Advanced Studies in Electronics Science and TechnologySchool of PhysicsUniversity of Hyderabad Prof. C. R. Rao Road, Gachibowli Hyderabad 500046 Telangana India

2. Department of Condensed Matter Physics and Materials ScienceTata Institute of Fundamental Research Homi Bhabha Road Mumbai 400005 India

Funder

University Grants Commission

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900392

Reference36 articles.

1. Effects of metal electrodes on the resistive memory switching property of NiO thin films

2. Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices

3. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

4. Organic and hybrid resistive switching materials and devices

5. Van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) transparent flexible memristor

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