Enhancement of the switchable diode effect by the surface hydroxylation of ferroelectric oxide thin films-Reference-Cited by-同舟云学术

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Enhancement of the switchable diode effect by the surface hydroxylation of ferroelectric oxide thin films

Published:2020-09-01 Issue:9 Volume:10 Page:095002
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Li Tong¹²,Yang Ying²,Zhang Yuelin²,Pei Minghui²,Yang Yuben²,Tian Yu³,Wu Junsheng¹^ORCID,Zhou Yanwen¹^ORCID,Zhu Hui⁴

Affiliation:

1. Chemical Industry Institute, University of Science and Technology Liaoning, 114051 Anshan, China

2. Department of Physics, Beijing Normal University, 100875 Beijing, China

3. School of Basic Medical Science, Air Force Medical University, 710032 Xi’an, China

4. School of Microelectronics, Faculty of Information Technology, Beijing University of Technology, 100124 Beijing, China

Funder

Funds of Young Teachers of University of Science and Technology Liaoning

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0022725

Reference42 articles.

1. Non-volatile memory based on the ferroelectric photovoltaic effect

2. Ferroelectric thin and thick films for microsystems

3. Ferroelectric domain inversion in Ti‐diffused LiNbO3optical waveguide

4. Resistive Switching Behavior in Ferroelectric Heterostructures

5. Environmentally Robust Memristor Enabled by Lead‐Free Double Perovskite for High‐Performance Information Storage

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