Room-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123860
Reference19 articles.
1. Wafer bonding for silicon‐on‐insulator technologies
2. Bonding of silicon wafers for silicon‐on‐insulator
3. Applications of the silicon wafer direct-bonding technique to electron devices
4. Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement
5. Effects of Heat Treatment on Bonding Properties in InP-to-Si Direct Wafer Bonding
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