Analysis of strain and mosaicity in a short‐period Si9Ge6superlattice by x‐ray diffraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111555
Reference15 articles.
1. Ultrathin SimGenstrained layer superlattices-a step towards Si optoelectronics
2. Fabrication of high mobility two‐dimensional electron and hole gases in GeSi/Si
3. Characterization of short-period Sim Gen superlattices by high-resolution transmission electron microscopy and X-ray diffraction
4. Anomalous strain relaxation in SiGe thin films and superlattices
5. Effect of compressive and tensile strain on misfit dislocation injection in SiGe epitaxial layers
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