Photoluminescence study of Si-doped GaN∕Al0.07Ga0.93N multiple quantum wells with different dopant position-Reference-Cited by-同舟云学术

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Photoluminescence study of Si-doped GaN∕Al0.07Ga0.93N multiple quantum wells with different dopant position

Published:2004-06-21 Issue:25 Volume:84 Page:5071-5073
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Haratizadeh H.,Monemar B.,Paskov P. P.,Bergman J. P.,Sernelius B. E.,Holtz P. O.,Iwaya M.,Kamiyama S.,Amano H.,Akasaki I.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1763976

Reference14 articles.

1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

2. Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN

3. Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

4. A Review of Dry Etching of GaN and Related Materials

5. Structural analysis of Si-doped AlGaN/GaN multi-quantum wells

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1. Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping;Applied Physics Letters;2014-03-10

2. Carrier Dynamics in High-Efficiency Blue GaN Light-Emitting Diodes Under Different Bias Currents and Temperatures;IEEE Photonics Journal;2012-10

3. Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical–Optical Pump–Probe Technique;IEEE Transactions on Electron Devices;2011-02

4. Effect of Silicon Doped Quantum Barriers on Nitride-Based Light Emitting Diodes;Journal of The Electrochemical Society;2011

5. Magneto-optical study ofn-type modulation-dopedZnO/MgxZn1−xOsingle quantum well structures;Physical Review B;2009-10-30

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