Sidewall growth by atomic layer epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100264
Reference12 articles.
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3. A study of the orientation dependence of Ga(Al)As growth by MOVPE
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5. Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition
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1. Impact of Atomic Layer Deposition to Nanophotonic Structures and Devices;Frontiers in Materials;2014-10-15
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