GaAs/GaAlAs quantum well laser with a lateral spatial variation in thickness grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98104
Reference8 articles.
1. Circuit modeling of the effect of diffusion on damping in a narrow-stripe semiconductor laser
2. Self‐aligned GaAs/GaAIAs semiconductor laser with lateral spatial variation in thickness grown by metalorganic‐chemical vapor deposition
3. Self‐aligned GaAs/GaAIAs semiconductor laser with lateral spatial variation in thickness grown by metalorganic‐chemical vapor deposition
4. Self‐aligned GaAs/GaAIAs semiconductor laser with lateral spatial variation in thickness grown by metalorganic‐chemical vapor deposition
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1. Surface smoothing of GaAs microstructure by atomic layer epitaxy;Applied Physics Letters;1999-02-15
2. Micromachined, reusable shadow mask for integrated optical elements grown by metalorganic chemical vapor deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
3. MBE Regrowth Over a Selectively Undercut GaAs Masking Layer;MRS Proceedings;1994
4. Chapter 4 Lateral Patterning of Quantum Well Heterostructures by Growth on Nonplanar Substrates;Semiconductors and Semimetals;1994
5. Selective-area and sidewall growth by atomic layer epitaxy;Semiconductor Science and Technology;1993-06-02
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