Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 “hyperfine spectrum”
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126776
Reference22 articles.
1. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II
2. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers
3. Hole traps and trivalent silicon centers in metal/oxide/silicon devices
4. High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29Si hyperfine spectra
5. Pb1interface defect in thermal(100)Si/SiO2: 29Sihyperfine interaction
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