Dislocation core structures in Si-doped GaN-Reference-Cited by-同舟云学术

Dislocation core structures in Si-doped GaN

Author:

Rhode S. L.¹,Horton M. K.²^ORCID,Fu W. Y.¹^ORCID,Sahonta S.-L.¹,Kappers M. J.¹,Pennycook T. J.³⁴,Humphreys C. J.¹^ORCID,Dusane R. O.⁵,Moram M. A.¹²

Affiliation:

1. Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

2. Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom

3. SuperSTEM, STFC Daresbury Laboratories, Warrington WA4 4AD, United Kingdom

4. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom

5. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076, India

Funder

St. John's college, University of Cambridge

Engineering and Physical Sciences Research Council (EPSRC)

Royal Society

British Federation of Women Graduates (BFWG)

Cambridge Commonwealth Trust

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference42 articles.

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