Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching-Reference-Cited by-同舟云学术

Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching

Published:2020-03-01 Issue:3 Volume:8 Page:031115
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Massabuau Fabien C.-P.¹^ORCID,Griffin Peter H.¹^ORCID,Springbett Helen P.¹,Liu Yingjun¹^ORCID,Kumar R. Vasant¹,Zhu Tongtong¹^ORCID,Oliver Rachel A.¹^ORCID

Affiliation:

1. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

Funder

Engineering and Physical Sciences Research Council FundRef identification ID:

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5142491

Reference26 articles.

1. Nitride-based semiconductors for blue and green light-emitting devices

2. A gallium nitride single-photon source operating at 200 K

3. Design and characterization of GaN∕InGaN solar cells

4. Gallium nitride devices for power electronic applications

5. III-nitride on silicon electrically injected microrings for nanophotonic circuits

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