Behavior of an EL5‐like defect in metalorganic vapor‐phase epitaxial GaAs:Sb
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355184
Reference19 articles.
1. The trend of deep states in organometallic vapor‐phase epitaxial GaAs with varying As/Ga ratios
2. Deep electron traps in organometallic vapor phase grown AlxGa1−xAs
3. Deep levels in MOCVD GaAs grown under different Ga/As mol fractions
4. Electrical and optical properties of deep levels in MOVPE grown GaAs
5. AsH3to Ga(CH3)3Mole Ratio Dependence of Dominant Deep Levels in MOCVD GaAs
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