Deep levels in MOCVD GaAs grown under different Ga/As mol fractions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. The Use of Metal-Organics in the Preparation of Semiconductor Materials
2. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
3. Proc. 7th Intern. Symp. on GaAs and Related Compounds;Itoh,1979
4. Continuous room‐temperature operation of Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition
5. Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's
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