High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer-Reference-Cited by-同舟云学术

High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer

Published:2010-07-05 Issue:1 Volume:97 Page:012106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gu J. J.,Liu Y. Q.,Xu M.,Celler G. K.,Gordon R. G.,Ye P. D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3462303

Reference13 articles.

1. Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

2. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

3. p-Channel Ge MOSFET by Selectively Heteroepitaxially Grown Ge on Si

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