Capacitance-voltage investigation of high-purity InAs∕GaSb superlattice photodiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2172399
Reference19 articles.
1. Two-dimensional electronic structure in InAs-GaSb superlattices
2. Proposal for strained type II superlattice infrared detectors
3. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb
4. Very long wavelength infrared type-II detectors operating at 80 K
5. Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering
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2. Determination of background doping type in type-II superlattice using capacitance-voltage measurements with double mesa structure;Infrared Technology and Applications XLVI;2020-04-23
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