Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1632035
Reference14 articles.
1. Dead-time-free selective dry etching of GaAs/AlGaAs using BCl3/CHF3 plasma
2. Selective Dry Etching of AlGaAs-GaAs Heterojunction
3. Nonselective etching of GaAs/AlGaAs double heterostructure laser facets by Cl2reactive ion etching in a load‐locked system
4. Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs
5. Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs
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