Lattice strain analysis of silicon fin field-effect transistor structures wrapped by Ge2Sb2Te5liner stressor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4792477
Reference32 articles.
1. Fabrication of Metal Gated FinFETs Through Complete Gate Silicidation With Ni
2. Sub-50 nm P-channel FinFET
3. Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content
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1. Study of Temperature Effect on Analog/RF and Linearity Performance of Dual Material Gate (DMG) Vertical Super-Thin Body (VSTB) FET;Silicon;2020-07-15
2. Simulation and characterization of stress in FinFETs using novel LKMC and nanobeam diffraction methods;Journal of Semiconductors;2015-08
3. Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction;Applied Physics Letters;2014-08-25
4. Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors;physica status solidi (c);2014-07-25
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