Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4893926
Reference16 articles.
1. Sub-50 nm P-channel FinFET
2. Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era
3. Realization and characterization of nano-scale FinFET devices
4. Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
5. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors
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