Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126414
Reference9 articles.
1. Arsenic surfactant effects and arsenic mediated molecular beam epitaxial growth for cubic GaN
2. Optimized growth conditions for the epitaxial nucleation of β-GaN on GaAs(001) by molecular beam epitaxy
3. Incorporation and optical properties of magnesium in cubic GaN epilayers grown by molecular beam epitaxy
4. Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy
5. Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
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1. GaN as an Interfacial Passivation Layer: Tuning Band Offset and Removing Fermi Level Pinning for III–V MOS Devices;ACS Applied Materials & Interfaces;2015-02-25
2. Molecular beam epitaxy growth of GaN, AlN and InN;Progress in Crystal Growth and Characterization of Materials;2004-01
3. Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy;Materials Science Forum;2003-09
4. Excitons of the structure in wurtzite InxGa1−xN and their properties;Journal of Crystal Growth;2002-12
5. Substrates for gallium nitride epitaxy;Materials Science and Engineering: R: Reports;2002-04
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