Arsenic surfactant effects and arsenic mediated molecular beam epitaxial growth for cubic GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121539
Reference11 articles.
1. Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy
2. High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2× 2) and (4× 4) Reflection High Energy Electron Diffraction Patterns
3. Epitaxial growth and optical transitions of cubic GaN films
4. Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal‐phase GaN by molecular beam epitaxy
5. Surface Reconstructions and III-V Stoichiometry: The Case of Cubic and Hexagonal GaN
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