Mn as Surfactant for the Self-Assembling of AlxGa1–xN/GaN Layered Heterostructures
Author:
Affiliation:
1. Institut für Halbleiter-und-Festkörperphysik, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz, Austria
2. Institute of Physics PAS SL 1.4, al. Lotnikow 32/46, 02-668 Warsaw, Poland
Funder
European Research Council
Austrian Science Fund
Directorate-General for Regional Policy
European Institute of Technology Plus
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg501144w
Reference35 articles.
1. GaN based transistors for high power applications
2. AlGaN/GaN HEMTs-an overview of device operation and applications
3. AlGaN-Based 355 nm UV Light-Emitting Diodes with High Power Efficiency
4. A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode
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