Determination of InN–GaN heterostructure band offsets from internal photoemission measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2794788
Reference14 articles.
1. Band parameters for nitrogen-containing semiconductors
2. Unusual properties of the fundamental band gap of InN
3. Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
4. Effective mass of InN epilayers
5. Valence band splittings and band offsets of AlN, GaN, and InN
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