Electronic band structure pseudopotential calculation of InGaN/GaN quantum wells
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s11082-022-04244-z.pdf
Reference31 articles.
1. Auf der Maur, M., Pecchia, A., Penazzi, G., Rodrigues, W., Di Carlo, A.: Efficiency drop in green InGaN/GaN light emitting diodes: the role of random alloy fluctuations. Phys. Rev. Lett. 116, 027401, (2016). https://doi.org/10.1103/PhysRevLett.116.027401
2. Auf der Maur, M., Pecchia, A., Penazzi, G., Sacconi, F., Di Carlo, A.: Coupling atomistic and continuous media models for electronic device simulation. J. Comput. Electron. 12, 553–562, (2013). https://doi.org/10.1007/s10825-013-0517-0
3. Bellaiche, L., Mattila, T., Wang, L.W., Wei, S.H., Zunger, A.: Resonant hole localization and anomalous optical bowing in InGaN alloys. Appl. Phys. Lett. 74, 1842-1844 (1999). https://doi.org/10.1063/1.123687
4. Bernardini, F., Fiorentini, V.: Nonlinear macroscopic polarization in III-V nitride alloys. Phys. Rev. B 64, 085207 (2001). https://doi.org/10.1103/PhysRevB.64.085207
5. Bertazzi, F., Goano, M., Bellotti, E.: A numerical study of Auger ecombination in bulk InGaN. Appl. Phys. Lett. 97, 231118 (2010). https://doi.org/10.1063/1.4733353
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