Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN-Reference-Cited by-同舟云学术

Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN

Published:2007-07-23 Issue:4 Volume:91 Page:043503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Khan Aurangzeb,Gou J.,Imazumi M.,Yamaguchi M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2759950

Reference10 articles.

1. Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells

2. Deep-level defects in InGaAsN grown by molecular-beam epitaxy

3. Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy

4. Capacitance-spectroscopy identification of a key defect in N-degraded GalnNAs solar cells

5. S. Kurtz, S. W. Johnston, J. F. Geisz, D. J. Friedman, and A. J. Ptak, Proceedings of the 31st IEEE Photovotaics Specialists Conference (IEEE, New York, 2005), p. 595.

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