Absorption edge and ion bombardment of silicon nitride
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323177
Reference20 articles.
1. Hydrogen content and annealing of memory quality silicon-oxynitride films
2. Quantitative Detection of Oxygen in Silicon Nitride on Silicon
3. Properties of Si[sub x]O[sub y]N[sub z] Films on Si
4. Properties of Si[sub x]O[sub y]N[sub z] Films on Si
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1. Silicon nitride films prepared by helicon wave plasam-enhanced chemical vapour deposition;Acta Physica Sinica;2003
2. Photoluminescence of Si3N4 films implanted with Ge+ and Ar+ ions;Semiconductors;1999-05
3. Microstructure and properties of silicon nitride thin films deposited by reactive bias magnetron sputtering;Journal of Applied Physics;1998-06
4. Kinetic Theory of the Lorentz Gas;Contributions to Plasma Physics;1994
5. Effect of substrate bias on properties of silicon nitride films prepared by activated reactive evaporation;Thin Solid Films;1992-11
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