Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3686151
Reference33 articles.
1. Effects of the compensation level on the carrier lifetime of crystalline silicon
2. Recombination in compensated crystalline silicon for solar cells
3. On the Effect of Impurities on the Photovoltaic Behavior of Solar‐Grade Silicon: I . The Role of Boron and Phosphorous Primary Impurities in p‐type Single‐Crystal Silicon
4. J. Kraiem, R. Einhaus, and H. Lauvray, in Proceedings 34th IEEE Photovoltaic Specialists Conference, Philadelphia (IEEE, New York, 2009), p. 1327.
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