High-Temperature Piezoresistance of Silicon Carbide and Gallium Nitride Materials
Author:
Affiliation:
1. Department of Electronics and Electrical Engineerings, Keio University, Yokohama, Japan
2. Department of Nano Material and Bio Engineering, Tokushima Bunri University, Sanuki, Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/9714452/09709885.pdf?arnumber=9709885
Reference50 articles.
1. Thermal expansion of gallium nitride
2. Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction
3. Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films
4. Characterization of n-type beta -SiC as a piezoresistor
5. Electrical and Thermal Properties of Nitrogen-Doped SiC Sintered Body
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1. Mechanical Stress Effects on 4H-Silicon Carbide Power Diodes;IEEE Open Journal of Power Electronics;2024
2. Review: Numerical Simulations of Semiconductor Piezoresistance for Computer-Aided Designs;IEEE Journal of the Electron Devices Society;2023
3. Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides;IEEE Journal of the Electron Devices Society;2022
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