Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2749484
Reference42 articles.
1. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
2. Strain evolution in GaN layers grown on high-temperature AlN interlayers
3. Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire
4. Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells
5. Strain effects on optical gain in wurtzite GaN
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