Effects of the compensation level on the carrier lifetime of crystalline silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2961030
Reference12 articles.
1. Mobility of Electrons in Compensated Semiconductors. I. Experiment
2. Statistics of the Recombinations of Holes and Electrons
3. Validity of simplified Shockley-Read-Hall statistics for modeling carrier lifetimes in crystalline silicon
4. Injection and Transport of Added Carriers in Silicon at Liquid‐Helium Temperatures
5. Iron and its complexes in silicon
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