Demonstration of infrared nBn photodetectors based on the AlInAsSb digital alloy materials system-Reference-Cited by-同舟云学术

Demonstration of infrared nBn photodetectors based on the AlInAsSb digital alloy materials system

Published:2021-07-19 Issue:3 Volume:119 Page:031101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Dekang¹,Wang Renjie¹,Andrew McArthur J.²,Xue Xingjun¹,Jones Andrew H.¹,Bank Seth R.²,Campbell Joe C.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, USA

2. Microelectronics Research Center, University of Texas, Austin, Texas 78758, USA

Funder

Army Research Office

Defense Advanced Research Projects Agency

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0058462

Reference25 articles.

1. R. Linares , G. Vergara , R. Gutiérrez , C. Fernández , V. Villamayor , L. Gómez , M. González-Camino , and A. Baldasano , in Proc. SPIE 9485, Thermosense: Thermal Infrared Applications XXXVII, edited by S. J. (Tony) Hsieh and J. N. Zalameda ( Baltimore, Maryland, 2015), p. 94851F.

2. nBn structure based on InAs∕GaSb type-II strained layer superlattices

3. Dark current improvement due to dry-etch process in InAs/GaSb type-II superlattice LWIR photodetector with nBn structure

4. Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

5. Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling

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