Dark current improvement due to dry-etch process in InAs/GaSb type-II superlattice LWIR photodetector with nBn structure-Reference-Cited by-同舟云学术

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Dark current improvement due to dry-etch process in InAs/GaSb type-II superlattice LWIR photodetector with nBn structure

Published:2018-11 Issue: Volume:94 Page:161-164
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Lee H.J.,Jung H.C.,Jang A.,Kim J.G.,Ko S.Y.,Kim Y.H.,Nah J.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Challenges of small-pixel infrared detectors: a review;Rogalski;Reports Prog. Phys.,2016

2. Performance improvement of long-wave infrared inas/gasb strained-layer superlattice detectors through sulfur-based passivation;Plis;Infrared Phys. Technol.,2012

3. Advances in antimonide-based type-ii superlattices for infrared detection and imaging at center for quantum devices;Razeghi;Infrared Phys. Technol.,2013

4. Recent progress in infrared detector technologies;Rogalski;Infrared Phys. Technol.,2011

5. Next decade in infrared detectors;Rogalski;Proc. SPIE,2017

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays;Opto-Electronics Review;2024-01-03

2. Design and performance of dual-band MWIR/LWIR focal plane arrays based on a type-II superlattice nBn structure;Opto-Electronics Review;2024-01-03

3. Antimony-based Type-II superlattice infrared detectors: An overview;Reference Module in Materials Science and Materials Engineering;2024

4. Dark Current Analysis of InAs/GaSb Type II Superlattice Infrared Detectors;IEEE Transactions on Electron Devices;2023-11

5. The Effect of GaSb Substrate Oxidation Layer on InAs/GaSb Type II Superlattice;Photonics;2023-03-22

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