Electron‐pulsed diffusion of Se in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91732
Reference8 articles.
1. p‐njunction formation in boron‐deposited silicon by laser‐induced diffusion
2. Ohmic contacts produced by laser‐annealing Te‐implanted GaAs
3. Laser annealing of capped and uncapped GaAs
4. InP surface conducting films from electron‐pulse annealing
5. Pulsed‐electron‐beam annealing of ion‐implantation damage
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chapter 8 Pulsed Beam Processing of Gallium Arsenide;Semiconductors and Semimetals;1984
2. Rapid Thermal-Pulsed Diffusion of Zn into GaAs;MRS Proceedings;1984
3. Ohmic contacts to III–V compound semiconductors: A review of fabrication techniques;Solid-State Electronics;1983-03
4. Laser Induced Ohmic Conduction in Gallium Arsenide;Cohesive Properties of Semiconductors under Laser Irradiation;1983
5. Compound Semiconductors;Laser Annealing of Semiconductors;1982
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