Author:
Tiku S.K.,Delaney J.B.,Gabriel N.S.,Yuan H.T.
Abstract
ABSTRACTA rapid thermal process for the diffusion of Zn into GaAs has been developed
to fulfill the need for highly doped p type layers in GaAs technology. The
process uses a solid Zn:Si:O source layer and a quartz-halogen lamp system
for the thermal drive-in. Surface concentrations of the order of
1020/cm3 have been achieved with good depth
reproducibility and low lateral diffusion. Specific contact resistance of
Au:Zn/Au alloyed contacts fabricated using this process was in the
10−7 ohm-cm2 range.
Publisher
Springer Science and Business Media LLC
Cited by
7 articles.
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