InP surface conducting films from electron‐pulse annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91374
Reference3 articles.
1. Pulse electron annealing of ion‐implanted InP
2. Pulsed‐electron‐beam annealing of ion‐implantation damage
3. Anodic Oxidation and Electrical Carrier Concentration Profiles of Ion‐Implanted InP
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1. Electron-beam pulse annealed Ti-implanted GaP;Journal of Applied Physics;2016-08-28
2. CHANNELING AND TEM ANALYSIS OF RADIATION DAMAGE IN ION IMPLANTED AND PULSE ELECTRON BEAM ANNEALED InP;Ion Beam Modification of Materials;1996
3. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
4. Transient annealing of semiconductors by laser, electron beam and radiant heating techniques;Reports on Progress in Physics;1985-08-01
5. The role of defects in the diffusion and activation of impurities in ion implanted semiconductors;Journal of Electronic Materials;1984-03
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