Correlation between optoelectronic and structural properties and epilayer thickness of AlN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2747662
Reference15 articles.
1. Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
2. X‐ray characterization of high quality AlN epitaxial layers: effect of growth condition on layer structural properties
3. Reduction of threading dislocation densities in AlN∕sapphire epilayers driven by growth mode modification
4. InGaN Single-Quantum-Well LEDs
5. Defects and Doping
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