Autodoping of GaAs grown by organometallic vapor phase epitaxy on silicon substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101090
Reference10 articles.
1. Thickness dependence of material quality in GaAs‐on‐Si grown by metalorganic chemical vapor deposition
2. Optical and structural properties of GaAs grown on (100) Si by molecular‐beam epitaxy
3. Epitaxial GaAs grown directly on (100)Si by low pressure MOVPE using low temperature processing
4. Heterointerface stability in GaAs‐on‐Si grown by metalorganic chemical vapor deposition
5. MOCVD growth and characterization by Raman scattering, x-ray diffraction and Auger spectroscopy of short period GaAs/AlAs and GaAs/Ga1−xAlxAs superlattices
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1. GaAs/Si epitaxial integration utilizing a two-step, selectively grown Ge intermediate layer;Journal of Crystal Growth;2010-04
2. Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si;Journal of Crystal Growth;2008-07
3. Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers;Journal of Applied Physics;2003-01
4. The effect of dislocations on the transport properties of III/V‐compound semiconductors on Si;Journal of Applied Physics;1995-11-15
5. The role of the V/III ratio in the growth and structural properties of metalorganic vapor phase epitaxy GaAs/Ge heterostructures;Journal of Electronic Materials;1995-11
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