Discussion of the surface‐potential fluctuations caused by oxide‐charge fluctuations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1663634
Reference3 articles.
1. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
2. Measurement of low densities of surface states at the SiSiO2-interface
3. Surface Potential Fluctuations Generated by Interface Charge Inhomogeneities in MOS Devices
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