Characterization of Si‐SiO2interface traps inp‐metal‐oxide‐semiconductor structures with thin oxides by conductance technique
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339091
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5. FREQUENCY DEPENDENCE OF THE IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES
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