Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes-Reference-Cited by-同舟云学术

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Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes

Published:2021-11 Issue: Volume:621 Page:413207
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Çetinkaya H.G.,Demirezen S.,Altındal Yerişkin S.

Funder

Gazi Üniversitesi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Physics of Semiconductor Devices 3rd;Sze,2007

2. Metal Oxide Semiconductor (MOS) Physics and Technology, New York;Nicollian,1982

3. Metal-Semiconductor Schottky Barrier Junctions and Their Applications;Sharma,1984

4. “Comparative investigation on the effects of organic and inorganic interlayers in Au/n-GaAs Schottky diodes;Tan;IEEE Trans. Electron. Dev.,2017

5. Metal oxide semiconductor-based Schottky diodes: a review of recent advances, Metal oxide semiconductor-based Schottky diodes: a review of recent advances;Al-Ahmadi;Mater. Res. Express,2020

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comparative study of the Au/n-Si (MS) and Au/(ZnO:CeO₂:PVP)/n-Si (MPS) Schottky structures by using current/voltage characteristics in dark and under illumination;Physica Scripta;2024-08-01

2. A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements;Journal of Materials Science: Materials in Electronics;2024-04

3. Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method;Journal of Materials Science: Materials in Electronics;2024-02

4. Voltage and frequency reliant interface traps and their lifetimes of the MPS structures interlayered with CdTe:PVA via the admittance method;Physica B: Condensed Matter;2024-01

5. Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered With ZnFe₂O₄ Doped PVA;IEEE Transactions on Nanotechnology;2024

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