Photon-induced modifications in cadmium telluride/mercury cadmium telluride heterostructure interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1290145
Reference11 articles.
1. Passivation with II–VI compounds
2. Surface Passivation of Mercury-Cadmium-Telluride Infrared Detectors
3. Application of CdTe epitaxial layers for passivation ofp‐type Hg0.77Cd0.23Te
4. The interface of metalorganic chemical vapor deposition-CdTe/HgCdTe
5. Characterization of CdTe for HgCdTe surface passivation
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1. Structure and Electrical Characteristics of Metal/MCT Interfaces;Mercury Cadmium Telluride;2010-09-04
2. Study of H loss from hydrogenated Hg1−xCdxTe under high electronic excitation by elastic recoil detection analysis (ERDA);Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-05
3. Improvement in the ability to block Hg out diffusion from Hg1−xCdxTe by hydrogenation;Semiconductor Science and Technology;2006-06-20
4. Bake stability of CdTe and ZnS on HgCdTe: An x-ray photoelectron spectroscopy study;Journal of Electronic Materials;2003-08
5. Plasma induced type conversion in mercury cadmium telluride;Semiconductor Science and Technology;2002-09-02
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