Application of CdTe epitaxial layers for passivation ofp‐type Hg0.77Cd0.23Te
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350608
Reference25 articles.
1. Minority carrier lifetime in LPE Hg1−x Cdx Te
2. Analysis of the R0A product in n+-p Hg1−xCdxTe photodiodes
3. The interface between Hg1−xCdxTe and its native oxide
4. Interface ofp‐type Hg1−xCdxTe passivated with native sulfides
5. Surface‐tunneling‐induced 1/ f noise in Hg1−xCdxTe photodiodes
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