Characterization of Si volume- and delta-doped InGaAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3388077
Reference15 articles.
1. Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxy
2. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
3. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs
4. Delta- (°-) doping in MBE-grown GaAs: Concept and device application
5. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
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